Chemical Formula | GeSbSeTe |
Catalog No. | ST0973 |
CAS Number | – |
Purity | 99.9%, 99.95%, 99.99%, 99.995%, 99.999% |
Shape | Discs, Plates, Column Targets, Step Targets, Custom-made |
Germanium Antimony Selenium Tellurium Sputtering Targets offered by Stanford Advanced Materials (SAM) are celebrated for their unmatched purity and competitive pricing. Leveraging our profound expertise in materials science, we assure exceptional performance and reliability through the application of meticulous craftsmanship in target production.
Precision-engineered from top-tier materials, Germanium-Antimony-Selenium-Tellurium (GeSbSeTe) Sputtering Targets provided by Stanford Advanced Materials (SAM) assure exceptional performance and reliability.
With a unique composition encompassing Germanium, Antimony, Selenium, and Tellurium, these targets exhibit outstanding electrical conductivity, a high melting point, and remarkable chemical stability. Additionally, their high refractive index makes them ideal for diverse optical applications. Backed by our commitment to excellence, trust that these targets will optimize your thin-film deposition processes to the fullest.
Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target
Compound Formula | GeSbSeTe |
Appearance | Silvery gray metallic Target |
Available Sizes | Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″ |
Our Germanium Antimony Selenium Tellurium Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.
SAM’s Germanium Antimony Selenium Tellurium Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.