Chemical Formula | GeS2 |
Catalog No. | ST0970 |
CAS Number | 12025-34-2 |
Purity | 99.9%, 99.95%, 99.99%, 99.995%, 99.999% |
Shape | Discs, Plates, Column Targets, Step Targets, Custom-made |
Stanford Advanced Materials (SAM) boasts Germanium Disulphide Sputtering Targets with unparalleled purity and competitive pricing. Backed by our extensive experience in materials science, we deliver exceptional performance and reliability with our meticulously crafted targets.
Stanford Advanced Materials (SAM) offers Germanium Disulphide Sputtering Targets, a high-quality material for thin-film deposition. Engineered with precision from the highest-grade materials, these targets deliver exceptional performance and dependability. Their unique Germanium and Disulphide composition offers a range of beneficial properties, including high electrical conductivity, a high melting point, and excellent chemical stability. Ideal for a variety of applications, such as microelectronics, solar cells, and other thin-film deposition processes requiring precise material control, SAM’s Germanium Disulphide Sputtering Targets meet the exacting standards of both research scientists and manufacturing professionals.
Related Product: Germanium Sputtering Target, Germanium Sulfide Sputtering Target
Compound Formula | GeS2 |
Molecular Weight | 136.77 |
Appearance | White Target |
Melting Point | 800 °C |
Density | 2.94 g/cm3 |
Available Sizes | Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″ |
Our Germanium Disulphide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.
SAM’s Germanium Disulphide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapour deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapour deposition (CVD), and physical vapour deposition (PVD) display and optical applications.