Chemical Formula | GaTe |
Catalog No. | |
CAS Number | 12024-14-5 |
Purity | 99.9%, 99.95%, 99.99%, 99.995%, 99.999% |
Shape | Discs, Plates, Column Targets, Step Targets, Custom-made |
Committed to delivering high purity and uniformity, the Gallium Tellurium Sputtering Target guarantees a reliable coating for advanced applications. Explore our platform featuring a curated selection of premium sputtering targets, embodying professionalism and excellence. Count on our dedicated approach to fulfill your specific thin film technology requirements, ensuring reliability and precision in every application.
Gallium Tellurium Sputtering Target is a specialized material used in the sputtering process for thin film deposition. In sputtering, high-energy ions are directed at a target material, causing atoms to be ejected from the target surface. These ejected atoms then deposit onto a substrate, forming a thin film with specific properties. Gallium telluride is a semiconductor material with applications in optoelectronic devices and solar cells.
Related Product: Gallium (III) Selenide Sputtering Target, CIGS Copper Indium Gallium-Tellurium Sputtering Target
Compound Formula | GaTe |
Molecular Weight | 197.32 |
Appearance | Grey Target |
Melting Point | 824 °C |
Density | 5.44 g/cm3 |
Available Sizes | Dia.: 1.0″, 2.0″, 3.0″, 4.0″, 5.0″, 6.0″
Thick: 0.125″, 0.250″ |
Our Gallium Tellurium Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.
SAM’s Gallium Tellurium Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.