ST0937 Cobalt Silicide Sputtering Target, CoSi2

Cobalt Silicide Sputtering Target Description

Cobalt Silicide Sputtering Target is a specialized material used in the sputtering process for the deposition of thin films in semiconductor and microelectronics manufacturing. The sputtering process involves bombarding a target material with high-energy ions to dislodge atoms or molecules from the target surface. These ejected particles then deposit onto a substrate, forming a thin film. Cobalt Silicide, in various stoichiometries, is commonly used in semiconductor fabrication due to its desirable properties.

Thin films are prepared on cleaned substrates, which are close in composition to the target and are obtained by adjusting the power and sputtering rate as well as by subsequent processing. The method produces films with good electrical conductivity, thermal stability, and low-stress levels. Stanford Advanced Materials (SAM) offers Cobalt Silicide Sputtering Targets with high purity, homogeneous composition and high film quality

In addition, Cobalt Silicide (CoSi2) has low resistivity, and good thermal stability, and is now widely used as a contact in large-scale integrated circuits.

Related Product: Cobalt Oxide Sputtering Targets, Cobalt Sputtering Target

Cobalt Silicide Sputtering Target Specifications

Cobalt Silicide Sputtering Target Handling Notes

1. Indium bonding is recommended for Cobalt Silicide Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

Cobalt Silicide Sputtering Target Application

Cobalt Silicide Sputtering Targets have a wide range of applications in Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and optical processes. The low resistivity and good thermal stability of cobalt silicide make it now widely used as a contact in large-scale integrated circuits. Cobalt Silicide Sputtering Targets also have research value and application prospects in the field of electricity.

Cobalt Silicide Sputtering Target Packaging

Our Cobalt Silicide Sputtering Target is carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s Cobalt Silicide Sputtering Target is available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD), and physical vapor deposition (PVD) display and optical applications.