| Catalog No. | SC2276 |
|---|---|
| Material | Si |
| Diameter | Ø 4″ / Ø 6″ / Ø 8″ |
| Dopant | Boron/Phosphorous/Antimony/Arsenic |
| Conductivity | P-type/N-type / Intrinsic |
Stanford Advanced Materials (SAM) provides silicon on insulator (SOI) wafer in diameter from 2″ to 12″. We always choose prime grade and a defect-free silicon wafer as a substrate for growing high uniformity thermal oxide layer to meet your specific requirements.
Silicon on insulator (SOI) wafers are most common in microelectromechanical systems (MEMS) and advanced complementary metal-oxide-semiconductor (CMOS) integrated circuit fabrication and can improve many of the processes that more traditional silicon wafers are used in. These wafers provide a manufacturing solution that helps reduce power and heat while increasing the speed performance of a device. SOI wafers are unique products for specific end-user applications.
|
Method |
Fusion bonding |
|
Diameter |
Ø 4″/ Ø 6″ / Ø 8″ |
|
Device thickness |
2 um ~ 300 um |
|
Tolerance |
+/- 0.5 um ~ 2 um |
|
Orientation |
<100> / <111> / <110> or others |
|
Conductivity |
P-type / N-type / Intrinsic |
|
Dopant |
Boron / Phosphorous / Antimony / Arsenic |
|
Resistivity |
0.001 ~ 100000 ohm-cm |
|
Oxide thickness |
500A ~ 4 um |
|
Tolerance |
+/- 5% |
|
Handle wafer |
>= 300 um |
|
Surface |
Double sides polished |
|
Coating |
Oxide and nitride can be supplied on both sides of SOI wafer |
The application areas of silicon on insulator (SOI) wafer include pressure sensors, silicon microphones, and fluidic components, while thicker layers are suitable for inertial sensor manufacturing. It can also be used in IC and MEMS process integration. It also enables integrated backside packaging and hermetic sealing.
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