| Catalog No. | CY2426 |
|---|---|
| Size | 10x10x0.33 mm or customed |
| Surface | Polished, One sides epi polished on Si face |
| Orientation | <0001> +/-0.5 |
| Growth Method | MOCVD |
A variety size of SiC silicon carbide crystal substrates can be offered by Stanford Advanced Materials (SAM). We have a professional sales team to offer a fast response within 24 hours and warm service.
SiC silicon carbide crystal substrate has many different crystal structures, which are called polytypes. The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.
|
SiC crystal substrate |
|
|
Formula weight |
40.10 |
|
Lattice constant |
a =3.07 A c = 10.05 A |
|
Stacking sequence |
ABCB |
|
Growth Technique |
MOCVD |
|
Polishing |
Silicon face polished |
|
Band Gap |
3.26 eV ( Indirect) |
|
Resistivity |
0.01~0.5 ohm-cm |
|
Hardness |
9 Mohs |
|
Doping level of nitrogen atoms |
10^18-19 cm^-3 |
|
Surface Roughness |
< 10 A by AFM |
Silicon carbide crystal substrates have been used for III-V Nitride Deposition; Optoelectronic Devices; High Power Devices; High-Temperature Devices; High-Frequency Power Device
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