Catalog No. | CY2423 |
---|---|
Size | Dia 2″x0.5mm, 10x10x0.5mm, 10x5x0.5mm |
Material | MgAl2O4 |
Density | 3.61g/cm3 |
Crystal Structure | Cubic: m3m |
Growth Method | Czochralski Method |
Magnesium aluminate crystal substrate of high quality is supplied in Stanford Advanced Materials (SAM). We customize the size and shape based on the design of the customer’s device.
Magnesium aluminate crystal substrate is an attractive material for uses in a wide range of optical, electronic and structural applications including windows and lenses, which require excellent transmission from the visible through to the mid IR.
It is also found that MgAl2O4 is a good substrate for III-V nitrides device. Spinel (MgAl2O4) is one candidate for such GaN LDs substrate.
Chemical formula |
MgAl2O4 |
lattice constant |
a=8.085Å |
Melting Point(℃) | 2130℃ |
Density |
3.61g/cm3 |
Thermal conductivity at 25°C, W x cm-1 x °K-1 | 14.0 W/(m•K) |
Surface roughness | Ra<5A (within 5*5 × m range) |
Growth Method |
Czochralski method |
– Magnesium aluminate crystal substrates are widely used in acoustic and microwave devices and fast IC epitaxial substrate.
– Magnesium aluminate crystal substrate is a good substrate for III-V nitride devices.