| Catalog No. | NR2172 |
|---|---|
| Material | GaN |
| Thickness | 4 ± 0.5 um |
| Conductive Type | N – type |
| Diameter | ϕ 101.6 ± 0.1 mm (4 inch diameter) |
| Electrical Resistance (µOhm-cm) | < 0.5 Ω·cm |
Stanford Advanced Materials (SAM) produces any diameters in order to provide the most flexibility as possible. With the aim of providing the largest range of specifications, we work either undoped or doped gallium nitride wafers.
Gallium nitride wafer is widely used as a substrate mainly for the light-emitting diode (blue color LED, violet color LED, ultraviolet LED and white color LED) and blue-violet color laser diode for blue ray.
|
Conductivity type |
N-Type (undoped) |
|
Size |
ϕ 101.6 ± 0.1 mm (4 inch diameter) |
|
Useable area |
>90% |
|
Orientation |
C plane (0001) ± 0.5° |
|
Orientation Flat |
(1-100) ± 0.5°, 16.0 ± 1.0 mm |
|
Secondary Orientation flat |
(11-20) ± 3°, 8.0 ± 1.0 mm |
|
Total Thickness Variation |
<15 μm |
|
Resistivity (300K) |
< 0.5 Ω·cm |
|
Dislocation Density |
< 5×10^8 cm^-2 |
Gallium nitride wafer has been used in:
– Light-emitting diode
– Blue violent color laser diode for blue way
– LED, LD device
Submit your review | |
