ST0902 Cobalt Chromium Iron Nickel Manganese High-Entropy Alloy (HEA) Sputtering Target, Co/Cr/Fe/Ni/Mn

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Handling Notes

1. Indium bonding is recommended for CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target, due to some of its characteristics not amenable to sputtering like brittleness, low thermal conductivity, etc.
2. This material has a low thermal conductivity and is susceptible to thermal shock.

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Application

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target is widely employed in various applications, including the production of electronic devices, photovoltaic cells, and coatings for various surfaces.

CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Target Packaging

Our CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Targets are carefully handled during storage and transportation to preserve the quality of our products in their original condition.

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SAM’s CoCrFeNiMn High-Entropy Alloy (HEA) Sputtering Targets are available in various forms, purities, and sizes. We specialize in producing high-purity physical vapor deposition (PVD) materials with the highest possible density and smallest possible average grain sizes for use in semiconductor, chemical vapor deposition (CVD) and physical vapor deposition (PVD) display and optical applications. Get an inquiry right now.