Magnetron sputtering is a kind of physical vapor deposition (PVD) technology. The general sputtering method can be used to prepare a plurality of materials such as metal, semiconductor, insulator, etc., and has the advantages of simple equipment, easy control, large coating area, and strong adhesion. Magnetron sputtering has been developed since the 1970s. In addition...Continue Reading
Copper plating is one of the most widely used pre-plated layers in the electroplating industry, including solder joints, lead-tin alloys, and zinc die-casting parts. Two important applications for copper plating are on TSV and LCD panels. Through Silicon Via (TSV) One developing application for copper plating technology is through-silicon via (TSV) 3D integration. The goal...Continue Reading
Today’s article is a follow-up update of “Sputter Coating Technologies: Direct Current (DC) Sputtering“. We have already introduced DC sputtering in detail in that article, so today SAM Sputter Targets will introduce another sputter coating technology, which is called Radio Frequency (RF) sputtering. RF sputtering uses alternate current (AC) power instead of DC power to...Continue Reading
Since tantalum has the ability to form oxides thin film, which has a protective effect, the tantalum target is widely used as a base material for electrolytic capacitor manufacturing. This article introduces the application of tantalum sputtering targets in the field of microelectronics. Tantalum for Thermal Inkjet Print Head Application Thermal inkjet print heads can be used...Continue Reading
Target magnetic field The cathode operating voltage of magnetron sputtering decreases as the target surface magnetic field increases, and also decreases as the sputtering etch groove of the target surface deepens. The sputtering current increases as the sputter etch bath of the target surface deepens because the sputter etched surface of the target gets closer...Continue Reading
1. Preparation of Cu/In film by magnetron sputtering In order to accurately control the element ratio of Cu/In, CuIn film is prepared by the co-sputtering method. That is, the Cu/In alloy target and the In elemental target are simultaneously sputtered in the same sputtering chamber. The distribution of Cu/In content has a great influence on...Continue Reading
As is known, the ITO sputtering target is a black-gray ceramic semiconductor formed by a series of production processes after indium oxide and tin oxide powder are mixed in a certain proportion, and then sintered in a high-temperature atmosphere (1600 degrees, oxygen sintering). The ITO film was subjected to magnetron sputtering to oxidize the ITO target...Continue Reading
Sputter deposition rate is a parameter that characterizes the film formation rate. In addition to the influencing factors such as the type and pressure of the working gas, target type and area size of the “sputter etched area”, and target surface temperature and target surface magnetic field strength, the deposition rate is also directly affected...Continue Reading
A vacuum evaporation film, in an environment of no less than 10-2Pa vacuum, which is heated by resistance heating or electron beam and laser bombardment to heat the evaporated material to a fixed temperature so that the thermal vibration energy of the molecules or atoms in the material exceeds the binding energy of the surface,...Continue Reading
