| Catalog No. | CY2535 |
|---|---|
| Size | 0.6-1.0 mm |
| Material | BN |
| Orientation | (100), (110), (111), +/- 0.5 degree |
| Growth Method | CVD |
Boron Nitride (BN) Single Crystal Substrates have been widely used in the industry. Stanford Advanced Materials (SAM) has over 20 years’ experience in the manufacture of the Boron Nitride (BN) Single Crystal Substrates.
Boron Nitride (BN) Single Crystal Substrates can be used as substrates for graphene in semiconductor applications such as optics and electronics. Stanford Advanced Materials (SAM) has rich experience in manufacturing Boron Nitride (BN) Single Crystal Substrates and provides customers with high-quality Boron Nitride (BN) Single Crystal Substrates at an affordable price.
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Boron Nitride (BN) single crystal substrates |
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Crystal Structure |
Hexagonal |
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Purity |
> 99.5% |
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Resistivity |
Insulator |
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Density |
1.9 to 2.1 g/cm3 |
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Poisson’s Ratio |
0.11 |
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Orientation |
<100>,<110>,<111> |
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Specific Heat |
840 to 1610 J/kg-K |
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Packing |
~10 pcs/Box |
Boron Nitride (BN) Single Crystal Substrates can be used as substrates for graphene in semiconductor applications such as optics and electronics.
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